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IRFB3006GPBF
IRFB3006GPBF
MOSFETs IRFB3006GPBF
Infineon
IRFB3006GPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRFB3006GPBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.83(Max)
Package Height9.02(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Process TechnologyHEXFET
Standard Package NameTO-220
Typical Fall Time (ns)189
Typical Rise Time (ns)182
Number of Elements per Chip1
Maximum Power Dissipation (mW)375000
Typical Gate Charge @ 10V (nC)200
Typical Gate Charge @ Vgs (nC)200@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)16
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)118
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)270
Typical Input Capacitance @ Vds (pF)8970@50V
Maximum Drain Source Resistance (mOhm)2.5@10V
Description
Trans MOSFET N-CH Si 60V 270A 3-Pin(3+Tab) TO-220AB Tube
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