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IRFB3206GPBF
IRFB3206GPBF
MOSFETs IRFB3206GPBF
Infineon
IRFB3206GPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRFB3206GPBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.83(Max)
Package Height9.02(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Process TechnologyHEXFET
Standard Package NameTO-220
Typical Fall Time (ns)83
Typical Rise Time (ns)82
Number of Elements per Chip1
Maximum Power Dissipation (mW)300000
Typical Gate Charge @ 10V (nC)120
Typical Gate Charge @ Vgs (nC)120@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)19
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)55
Typical Gate to Drain Charge (nC)35
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)210
Typical Input Capacitance @ Vds (pF)6540@50V
Maximum Drain Source Resistance (mOhm)3@10V
Description
Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-220AB Tube
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