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IRFB4229PBF
IRFB4229PBF
MOSFETs IRFB4229PBF
Infineon
IRFB4229PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRFB4229PBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.82(Max)
Package Height9.02(Max)
Package Length10.66(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Process TechnologyHEXFET
Standard Package NameTO-220
Number of Elements per Chip1
Maximum Power Dissipation (mW)330000
Typical Gate Charge @ 10V (nC)72
Typical Gate Charge @ Vgs (nC)72@10V
Maximum Gate Source Voltage (V)±30
Maximum Drain Source Voltage (V)250
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)46
Typical Input Capacitance @ Vds (pF)4560@25V
Maximum Drain Source Resistance (MOhm)46@10V
Description
Trans MOSFET N-CH 250V 46A 3-Pin(3+Tab) TO-220AB Tube
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