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IRFB4310PBF
IRFB4310PBF
MOSFETs IRFB4310PBF
Infineon
IRFB4310PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRFB4310PBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.83(Max)
Package Height9.02(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Process TechnologyHEXFET
Standard Package NameTO-220
Typical Fall Time (ns)78
Typical Rise Time (ns)110
Number of Elements per Chip1
Maximum Power Dissipation (mW)300000
Typical Gate Charge @ 10V (nC)170
Typical Gate Charge @ Vgs (nC)170@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)26
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)68
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)130
Typical Input Capacitance @ Vds (pF)7670@50V
Maximum Drain Source Resistance (mOhm)7@10V
Description
Trans MOSFET N-CH 100V 130A 3-Pin(3+Tab) TO-220AB Tube
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