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IRFB7446GPBF
IRFB7446GPBF
MOSFETs IRFB7446GPBF
Infineon
IRFB7446GPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRFB7446GPBF.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MaterialSi
ECCN (US)EAR99
PackagingTube
AutomotiveNo
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Maximum IDSS (uA)1
Process TechnologyHEXFET
Typical Fall Time (ns)23
Typical Rise Time (ns)34
Number of Elements per Chip1
Maximum Power Dissipation (mW)99000
Typical Gate Charge @ 10V (nC)62
Typical Gate Charge @ Vgs (nC)62@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)11
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)33
Maximum Gate Threshold Voltage (V)3.9
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)123
Typical Input Capacitance @ Vds (pF)3183@25V
Maximum Drain Source Resistance (MOhm)3.3@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH Si 40V 123A Tube
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