Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant with Exemption |
Material | Si |
ECCN (US) | EAR99 |
Packaging | Tube |
Automotive | No |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Product Category | Power MOSFET |
Maximum IDSS (uA) | 1 |
Process Technology | HEXFET |
Typical Fall Time (ns) | 23 |
Typical Rise Time (ns) | 34 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 99000 |
Typical Gate Charge @ 10V (nC) | 62 |
Typical Gate Charge @ Vgs (nC) | 62@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 11 |
Maximum Drain Source Voltage (V) | 40 |
Typical Turn-Off Delay Time (ns) | 33 |
Maximum Gate Threshold Voltage (V) | 3.9 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 123 |
Typical Input Capacitance @ Vds (pF) | 3183@25V |
Maximum Drain Source Resistance (MOhm) | 3.3@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |