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IRFBE30PBF
IRFBE30PBF
MOSFETs IRFBE30PBF
Vishay
IRFBE30PBF
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Diodes, Transistors and Thyristors
MOSFETs
IRFBE30PBF.pdf
Specification
Product AttributeAttribute Value
HTS8541.10.00.80
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.65(Max)
Package Height9.14(Max)
Package Length10.52(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Maximum IDSS (uA)100
Standard Package NameTO-220
Typical Fall Time (ns)30
Typical Rise Time (ns)33
Number of Elements per Chip1
Maximum Power Dissipation (mW)125000
Typical Gate Charge @ 10V (nC)78(Max)
Typical Gate Charge @ Vgs (nC)78(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)310
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)800
Typical Gate Plateau Voltage (V)6
Typical Turn-Off Delay Time (ns)82
Maximum Diode Forward Voltage (V)1.8
Typical Gate to Drain Charge (nC)45(Max)
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)9.6(Max)
Typical Reverse Recovery Time (ns)480
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.1
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)1300@25V
Typical Reverse Recovery Charge (nC)1800
Maximum Drain Source Resistance (mOhm)3000@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)16
Typical Reverse Transfer Capacitance @ Vds (pF)190@25V
Description
Trans MOSFET N-CH 800V 4.1A 3-Pin(3+Tab) TO-220AB
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