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MOSFETs IRFBE30PBF-BE3
Vishay
IRFBE30PBF-BE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| Tab | Tab |
| PPAP | No |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 4.65(Max) |
| Package Height | 9.14(Max) |
| Package Length | 10.52(Max) |
| Product Category | Power MOSFET |
| Supplier Package | TO-220AB |
| Maximum IDSS (uA) | 100 |
| Typical Fall Time (ns) | 30 |
| Typical Rise Time (ns) | 33 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 125000 |
| Typical Gate Charge @ 10V (nC) | 78(Max) |
| Typical Gate Charge @ Vgs (nC) | 78(Max)@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 310 |
| Typical Turn-On Delay Time (ns) | 12 |
| Maximum Drain Source Voltage (V) | 800 |
| Typical Gate Plateau Voltage (V) | 6 |
| Typical Turn-Off Delay Time (ns) | 82 |
| Maximum Diode Forward Voltage (V) | 1.8 |
| Typical Gate to Drain Charge (nC) | 45(Max) |
| Maximum Gate Threshold Voltage (V) | 4 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Gate to Source Charge (nC) | 9.6(Max) |
| Typical Reverse Recovery Time (ns) | 480 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 4.1 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 1300@25V |
| Typical Reverse Recovery Charge (nC) | 1800 |
| Maximum Drain Source Resistance (mOhm) | 3000@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 16 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 190@25V |
| Description |
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