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IRFBE30SPBF
IRFBE30SPBF
MOSFETs IRFBE30SPBF
Vishay
IRFBE30SPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRFBE30SPBF.pdf
Specification
Product AttributeAttribute Value
HTS8542.39.00.01
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.41(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Standard Package NameTO-263
Typical Fall Time (ns)30
Typical Rise Time (ns)33
Number of Elements per Chip1
Maximum Power Dissipation (mW)125000
Typical Gate Charge @ 10V (nC)78(Max)
Typical Gate Charge @ Vgs (nC)78(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)800
Typical Turn-Off Delay Time (ns)82
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.1
Typical Input Capacitance @ Vds (pF)1300@25V
Maximum Drain Source Resistance (mOhm)3000@10V
Description
Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK
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