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IRFBF20S
IRFBF20S
MOSFETs IRFBF20S
Infineon
IRFBF20S
--
Diodes, Transistors and Thyristors
MOSFETs
IRFBF20S.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
EU RoHSNot Compliant
ECCN (US)EAR99
PackagingTape and Reel
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Typical Fall Time (ns)32
Typical Rise Time (ns)21
Number of Elements per Chip1
Maximum Power Dissipation (mW)3100
Typical Gate Charge @ 10V (nC)38(Max)
Typical Gate Charge @ Vgs (nC)38(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)8
Maximum Drain Source Voltage (V)900
Typical Turn-Off Delay Time (ns)56
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1.7
Typical Input Capacitance @ Vds (pF)490@25V
Maximum Drain Source Resistance (MOhm)8000@10V
Description
Trans MOSFET N-CH 900V 1.7A 3-Pin(2+Tab) D2PAK T/R
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