HTS | 8541.29.00.95 |
PPAP | No |
EU RoHS | Compliant |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Pin Count | 4 |
Automotive | No |
Lead Shape | Through Hole |
PCB changed | 4 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Dual Drain |
Package Width | 6.29(Max) |
Package Height | 3.37(Max) |
Package Length | 5(Max) |
Product Category | Power MOSFET |
Supplier Package | HVMDIP |
Maximum IDSS (uA) | 25 |
Standard Package Name | DIP |
Typical Fall Time (ns) | 42 |
Typical Rise Time (ns) | 58 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 1300 |
Typical Gate Charge @ 10V (nC) | 25(Max) |
Typical Gate Charge @ Vgs (nC) | 25(Max)@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 360 |
Typical Turn-On Delay Time (ns) | 13 |
Maximum Drain Source Voltage (V) | 60 |
Typical Gate Plateau Voltage (V) | 6.1 |
Typical Turn-Off Delay Time (ns) | 25 |
Maximum Diode Forward Voltage (V) | 1.5 |
Typical Gate to Drain Charge (nC) | 11(Max) |
Maximum Gate Threshold Voltage (V) | 4 |
Minimum Gate Threshold Voltage (V) | 2 |
Typical Gate to Source Charge (nC) | 5.8(Max) |
Typical Reverse Recovery Time (ns) | 80 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 2.5 |
Operating Junction Temperature (°C) | -55 to 175 |
Typical Input Capacitance @ Vds (pF) | 640@25V |
Typical Reverse Recovery Charge (nC) | 290 |
Maximum Drain Source Resistance (MOhm) | 100@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 20 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 79@25V |
Description | |