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IRFD210
IRFD210
MOSFETs IRFD210
Vishay
IRFD210
--
Diodes, Transistors and Thyristors
MOSFETs
IRFD210.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSNot Compliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count4
AutomotiveNo
Lead ShapeThrough Hole
PCB changed4
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Drain
Package Width6.29(Max)
Package Height3.37(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageHVMDIP
Standard Package NameDIP
Typical Fall Time (ns)8.9
Typical Rise Time (ns)17
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Typical Gate Charge @ 10V (nC)8.2(Max)
Typical Gate Charge @ Vgs (nC)8.2(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)8.2
Maximum Drain Source Voltage (V)200
Typical Turn-Off Delay Time (ns)14
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.6
Typical Input Capacitance @ Vds (pF)140@25V
Maximum Drain Source Resistance (MOhm)1500@10V
Description
Trans MOSFET N-CH 200V 0.6A 4-Pin HVMDIP
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