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IRFF330
IRFF330
MOSFETs IRFF330
Infineon
IRFF330
--
Diodes, Transistors and Thyristors
MOSFETs
IRFF330.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
Diameter9.22(Max)
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Height4.54(Max)
Product CategoryPower MOSFET
Supplier PackageTO-39
Process TechnologyHEXFET
Standard Package NameTO-205-AF
Typical Fall Time (ns)35(Max)
Typical Rise Time (ns)35(Max)
Number of Elements per Chip1
Maximum Power Dissipation (mW)25000
Typical Gate Charge @ 10V (nC)33(Max)
Typical Gate Charge @ Vgs (nC)33(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)30(Max)
Maximum Drain Source Voltage (V)400
Typical Turn-Off Delay Time (ns)55(Max)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3
Typical Input Capacitance @ Vds (pF)620@25V
Maximum Drain Source Resistance (mOhm)1100@10V
Description
Trans MOSFET N-CH 400V 3A 3-Pin TO-39
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