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IRFF9130
IRFF9130
MOSFETs IRFF9130
Infineon
IRFF9130
--
Diodes, Transistors and Thyristors
MOSFETs
IRFF9130.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
EU RoHSNot Compliant
Diameter9.22(Max)
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Height4.54(Max)
Product CategoryPower MOSFET
Supplier PackageTO-39
Maximum IDSS (uA)25
Process TechnologyHEXFET
Standard Package NameTO-205-AF
Typical Fall Time (ns)140(Max)
Typical Rise Time (ns)140(Max)
Number of Elements per Chip1
Maximum Power Dissipation (mW)25000
Typical Gate Charge @ 10V (nC)34.8(Max)
Typical Gate Charge @ Vgs (nC)34.8(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)350
Typical Turn-On Delay Time (ns)60(Max)
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)140(Max)
Maximum Diode Forward Voltage (V)4.3
Typical Gate to Drain Charge (nC)23.1(Max)
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)6.8(Max)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6.5
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)800@25V
Maximum Drain Source Resistance (mOhm)320@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)25
Typical Reverse Transfer Capacitance @ Vds (pF)125@25V
Description
Trans MOSFET P-CH 100V 6.5A 3-Pin TO-39
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