Product Attribute | Attribute Value |
HTS | 8541.21.00.95 |
PPAP | No |
EU RoHS | Not Compliant |
Diameter | 9.22(Max) |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Pin Count | 3 |
Automotive | No |
Lead Shape | Through Hole |
PCB changed | 3 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Single |
Package Height | 4.54(Max) |
Product Category | Power MOSFET |
Supplier Package | TO-39 |
Maximum IDSS (uA) | 25 |
Process Technology | HEXFET |
Standard Package Name | TO-205-AF |
Typical Fall Time (ns) | 140(Max) |
Typical Rise Time (ns) | 140(Max) |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 25000 |
Typical Gate Charge @ 10V (nC) | 34.8(Max) |
Typical Gate Charge @ Vgs (nC) | 34.8(Max)@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 350 |
Typical Turn-On Delay Time (ns) | 60(Max) |
Maximum Drain Source Voltage (V) | 100 |
Typical Turn-Off Delay Time (ns) | 140(Max) |
Maximum Diode Forward Voltage (V) | 4.3 |
Typical Gate to Drain Charge (nC) | 23.1(Max) |
Maximum Gate Threshold Voltage (V) | 4 |
Minimum Gate Threshold Voltage (V) | 2 |
Typical Gate to Source Charge (nC) | 6.8(Max) |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 6.5 |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Input Capacitance @ Vds (pF) | 800@25V |
Maximum Drain Source Resistance (mOhm) | 320@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 25 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 125@25V |
Description |