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IRFG5110
IRFG5110
MOSFETs IRFG5110
Infineon
IRFG5110
--
Diodes, Transistors and Thyristors
MOSFETs
IRFG5110.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count14
AutomotiveNo
PCB changed14
Part StatusActive
Channel ModeEnhancement
Channel TypeN|P
ConfigurationQuad
Package Width7.74(Max)
Package Height3.3(Max)
Package Length19.3(Max)
Product CategoryPower MOSFET
Supplier PackageMO-036AB
Standard Package NameMO-036AB
Typical Fall Time (ns)40(Max)@N Channel|60(Max)@P Channel
Typical Rise Time (ns)25(Max)@N Channel|60(Max)@P Channel
Number of Elements per Chip4
Maximum Power Dissipation (mW)1400
Typical Gate Charge @ 10V (nC)15(Max)@N Channel|22(Max)@P Channel
Typical Gate Charge @ Vgs (nC)15(Max)@10V@N Channel|22(Max)@10V@P Channel
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)20(Max)@N Channel|30(Max)@P Channel
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)40(Max)@N Channel|60(Max)@P Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1
Typical Input Capacitance @ Vds (pF)180@25V@N Channel|390@25V@P Channel
Maximum Drain Source Resistance (MOhm)800@10V
Description
Trans MOSFET N/P-CH 100V 1A 14-Pin MO-036AB
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