Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Automotive | No |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Quad Drain Triple Source |
Product Category | Power MOSFET |
Maximum IDSS (uA) | 250 |
Process Technology | HEXFET |
Typical Fall Time (ns) | 17 |
Typical Rise Time (ns) | 49 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 3500 |
Typical Gate Charge @ 10V (nC) | 74 |
Typical Gate Charge @ Vgs (nC) | 36@4.5V|74@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 15 |
Maximum Drain Source Voltage (V) | 25 |
Typical Turn-Off Delay Time (ns) | 21 |
Maximum Gate Threshold Voltage (V) | 2.1 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 44 |
Typical Input Capacitance @ Vds (pF) | 4620@13V |
Maximum Drain Source Resistance (MOhm) | 1.1@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |