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MOSFETs IRFH4251DTRPBF
Infineon
IRFH4251DTRPBF
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8542330001 |
| PPAP | No |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| PCB changed | 8 |
| Part Status | NRND |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Package Width | 6 |
| Package Height | 0.88 |
| Package Length | 5 |
| Product Category | Power MOSFET |
| Supplier Package | PQFN EP |
| Maximum IDSS (uA) | 1 |
| Process Technology | HEXFET |
| Standard Package Name | QFN |
| Typical Fall Time (ns) | 15@Q 1|60@Q 2 |
| Typical Rise Time (ns) | 61@Q 1|105@Q 2 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 31000@Q 1|63000@Q 2 |
| Typical Gate Charge @ Vgs (nC) | 10@4.5V@Q 1|44@4.5V@Q 2 |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 10@Q 1|24@Q 2 |
| Maximum Drain Source Voltage (V) | 25 |
| Typical Turn-Off Delay Time (ns) | 13@Q 1|35@Q 2 |
| Maximum Gate Threshold Voltage (V) | 2.1 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 188@Q 2|64@Q 1 |
| Typical Input Capacitance @ Vds (pF) | 1314@13V@Q 1|5845@13V@Q 2 |
| Maximum Drain Source Resistance (MOhm) | 3.2@10V@Q 1|0.85@10V@Q 2 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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