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MOSFETs IRFH7911TR2PBF
Infineon
IRFH7911TR2PBF
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 18 |
| Automotive | No |
| Lead Shape | No Lead |
| PCB changed | 18 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Package Width | 5 |
| Package Height | 0.95(Max) |
| Package Length | 6 |
| Product Category | Power MOSFET |
| Supplier Package | PQFN EP |
| Process Technology | HEXFET |
| Standard Package Name | QFN |
| Typical Fall Time (ns) | 5.9@Q 1|14@Q 2 |
| Typical Rise Time (ns) | 15@Q 1|35@Q 2 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 2400@Q 1|3400@Q 2 |
| Typical Gate Charge @ Vgs (nC) | 8.3@4.5V@Q 1|34@4.5V@Q 2 |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 12@Q 1|22@Q 2 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 12@Q 1|28@Q 2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 13@Q 1|28@Q 2 |
| Typical Input Capacitance @ Vds (pF) | 1060@15V@Q 1|4450@15V@Q 2 |
| Maximum Drain Source Resistance (MOhm) | 3@10V@Q 2|8.6@10V@Q 1 |
| Description |
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