PPAP | No |
EU RoHS | Compliant with Exemption |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 8 |
Automotive | No |
Lead Shape | No Lead |
PCB changed | 8 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Quad Drain Triple Source |
Package Width | 6 |
Package Height | 0.81 |
Package Length | 5 |
Product Category | Power MOSFET |
Supplier Package | PQFN EP |
Maximum IDSS (uA) | 1 |
Process Technology | HEXFET |
Standard Package Name | QFN |
Typical Fall Time (ns) | 22 |
Typical Rise Time (ns) | 54 |
Typical Switch Charge (nC) | 25 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 3600 |
Typical Gate Charge @ 10V (nC) | 111 |
Typical Gate Charge @ Vgs (nC) | 56@4.5V|111@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 1730 |
Typical Turn-On Delay Time (ns) | 27 |
Maximum Drain Source Voltage (V) | 25 |
Typical Gate Plateau Voltage (V) | 2.9 |
Typical Turn-Off Delay Time (ns) | 31 |
Maximum Diode Forward Voltage (V) | 1 |
Typical Gate to Drain Charge (nC) | 18 |
Maximum Gate Threshold Voltage (V) | 2.35 |
Minimum Gate Threshold Voltage (V) | 1.35 |
Typical Gate Threshold Voltage (V) | 1.8 |
Typical Gate to Source Charge (nC) | 16 |
Typical Reverse Recovery Time (ns) | 25 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 49 |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Input Capacitance @ Vds (pF) | 7330@13V |
Typical Reverse Recovery Charge (nC) | 57 |
Maximum Drain Source Resistance (MOhm) | 0.95@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 700 |
Maximum Power Dissipation on PCB @ TC=25°C (W) | 156 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 850@13V |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 35 |
Description | |