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IRFH8201TRPBF
IRFH8201TRPBF
MOSFETs IRFH8201TRPBF
Infineon
IRFH8201TRPBF
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width6
Package Height0.81
Package Length5
Product CategoryPower MOSFET
Supplier PackagePQFN EP
Maximum IDSS (uA)1
Process TechnologyHEXFET
Standard Package NameQFN
Typical Fall Time (ns)22
Typical Rise Time (ns)54
Typical Switch Charge (nC)25
Number of Elements per Chip1
Maximum Power Dissipation (mW)3600
Typical Gate Charge @ 10V (nC)111
Typical Gate Charge @ Vgs (nC)56@4.5V|111@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)1730
Typical Turn-On Delay Time (ns)27
Maximum Drain Source Voltage (V)25
Typical Gate Plateau Voltage (V)2.9
Typical Turn-Off Delay Time (ns)31
Maximum Diode Forward Voltage (V)1
Typical Gate to Drain Charge (nC)18
Maximum Gate Threshold Voltage (V)2.35
Minimum Gate Threshold Voltage (V)1.35
Typical Gate Threshold Voltage (V)1.8
Typical Gate to Source Charge (nC)16
Typical Reverse Recovery Time (ns)25
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)49
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)7330@13V
Typical Reverse Recovery Charge (nC)57
Maximum Drain Source Resistance (MOhm)0.95@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)700
Maximum Power Dissipation on PCB @ TC=25°C (W)156
Typical Reverse Transfer Capacitance @ Vds (pF)850@13V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)35
Description
Trans MOSFET N-CH 25V 49A 8-Pin PQFN EP T/R
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