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MOSFETs IRFHE4250DTRPBF
Infineon
IRFHE4250DTRPBF
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 30 |
| Automotive | No |
| Lead Shape | No Lead |
| PCB changed | 30 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Package Width | 6 |
| Package Height | 0.7(Max) |
| Package Length | 6 |
| Product Category | Power MOSFET |
| Supplier Package | QFN EP |
| Maximum IDSS (uA) | 500@Q 2|1@Q 1 |
| Process Technology | HEXFET |
| Standard Package Name | QFN |
| Typical Fall Time (ns) | 16@Q 2|12@Q 1 |
| Typical Rise Time (ns) | 33@Q 1|54@Q 2 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 156000 |
| Typical Gate Charge @ Vgs (nC) | 35@4.5V@Q 2|13@4.5V@Q 1 |
| Maximum Gate Source Voltage (V) | ±16 |
| Typical Turn-On Delay Time (ns) | 17@Q 2|11@Q 1 |
| Maximum Drain Source Voltage (V) | 25 |
| Typical Turn-Off Delay Time (ns) | 24@Q 2|14@Q 1 |
| Maximum Gate Threshold Voltage (V) | 2.1 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 86@Q 1|303@Q 2 |
| Typical Input Capacitance @ Vds (pF) | 4765@13V@Q 2|1735@13V@Q 1 |
| Maximum Drain Source Resistance (MOhm) | 2.75@10V@Q 1|0.9@10V@Q 2 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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