Product Attribute | Attribute Value |
Tab | Tab |
PPAP | No |
SVHC | Yes |
EU RoHS | Compliant with Exemption |
Material | Si |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tube |
Pin Count | 4 |
Automotive | No |
Lead Shape | Gull-wing |
PCB changed | 3 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Dual Drain |
Package Width | 3.7(Max) |
Package Height | 1.8(Max) - 0.06 |
Package Length | 6.7(Max) |
Product Category | Power MOSFET |
Supplier Package | SOT-223 |
Process Technology | HEXFET |
Standard Package Name | SOT |
SVHC Exceeds Threshold | Yes |
Typical Fall Time (ns) | 12 |
Typical Rise Time (ns) | 12 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 2100 |
Typical Gate Charge @ 10V (nC) | 23 |
Typical Gate Charge @ Vgs (nC) | 23@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 230 |
Typical Turn-On Delay Time (ns) | 7.1 |
Maximum Drain Source Voltage (V) | 55 |
Typical Turn-Off Delay Time (ns) | 19 |
Typical Gate to Drain Charge (nC) | 9.8 |
Maximum Gate Threshold Voltage (V) | 4 |
Typical Gate to Source Charge (nC) | 3.4 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 5.2 |
Typical Input Capacitance @ Vds (pF) | 660@25V |
Typical Reverse Recovery Charge (nC) | 120 |
Maximum Drain Source Resistance (mOhm) | 45@10V |
Description |