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IRFL4105PBF
IRFL4105PBF
MOSFETs IRFL4105PBF
Infineon
IRFL4105PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRFL4105PBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTube
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Drain
Package Width3.7(Max)
Package Height1.8(Max) - 0.06
Package Length6.7(Max)
Product CategoryPower MOSFET
Supplier PackageSOT-223
Process TechnologyHEXFET
Standard Package NameSOT
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)12
Typical Rise Time (ns)12
Number of Elements per Chip1
Maximum Power Dissipation (mW)2100
Typical Gate Charge @ 10V (nC)23
Typical Gate Charge @ Vgs (nC)23@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)230
Typical Turn-On Delay Time (ns)7.1
Maximum Drain Source Voltage (V)55
Typical Turn-Off Delay Time (ns)19
Typical Gate to Drain Charge (nC)9.8
Maximum Gate Threshold Voltage (V)4
Typical Gate to Source Charge (nC)3.4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)5.2
Typical Input Capacitance @ Vds (pF)660@25V
Typical Reverse Recovery Charge (nC)120
Maximum Drain Source Resistance (mOhm)45@10V
Description
Trans MOSFET N-CH Si 55V 5.2A 4-Pin(3+Tab) SOT-223 Tube
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