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IRFL4310TR
IRFL4310TR
MOSFETs IRFL4310TR
Infineon
IRFL4310TR
--
Diodes, Transistors and Thyristors
MOSFETs
IRFL4310TR.pdf
Specification
Product AttributeAttribute Value
HTS8542330001
TabTab
PPAPNo
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Drain
Package Width3.7(Max)
Package Height1.7(Max)
Package Length6.7(Max)
Product CategoryPower MOSFET
Supplier PackageSOT-223
Process TechnologyHEXFET
Standard Package NameSOT
Typical Fall Time (ns)20
Typical Rise Time (ns)18
Number of Elements per Chip1
Maximum Power Dissipation (mW)2100
Typical Gate Charge @ 10V (nC)17
Typical Gate Charge @ Vgs (nC)17@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)7.8
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)34
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.2
Typical Input Capacitance @ Vds (pF)330@25V
Maximum Drain Source Resistance (MOhm)200@10V
Description
Trans MOSFET N-CH Si 100V 2.2A 4-Pin(3+Tab) SOT-223 T/R
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