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IRFMG50SCV
IRFMG50SCV
MOSFETs IRFMG50SCV
Infineon
IRFMG50SCV
--
Diodes, Transistors and Thyristors
MOSFETs
IRFMG50SCV.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSNot Compliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.6(Max)
Package Height13.84(Max)
Package Length13.84(Max)
Supplier PackageTO-254AA
Number of Elements per Chip1
Maximum Power Dissipation (mW)150000
Maximum Drain Source Voltage (V)1000
Maximum Continuous Drain Current (A)5.6
Maximum Drain Source Resistance (mOhm)2000@10V
Description
Trans MOSFET N-CH 1KV 5.6A 3-Pin
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