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IRFP3710PBF
IRFP3710PBF
MOSFETs IRFP3710PBF
Infineon
IRFP3710PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRFP3710PBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5.31(Max)
Package Height20.7(Max)
Package Length15.87(Max)
Product CategoryPower MOSFET
Supplier PackageTO-247AC
Maximum IDSS (uA)25
Process TechnologyHEXFET
Standard Package NameTO-247
Typical Fall Time (ns)48
Typical Rise Time (ns)59
Number of Elements per Chip1
Maximum Power Dissipation (mW)200000
Typical Gate Charge @ 10V (nC)190(Max)
Typical Gate Charge @ Vgs (nC)190(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)640
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)100
Typical Gate Plateau Voltage (V)5
Typical Turn-Off Delay Time (ns)58
Maximum Diode Forward Voltage (V)1.3
Typical Gate to Drain Charge (nC)82(Max)
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)26(Max)
Typical Reverse Recovery Time (ns)210
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)57
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)3000@25V
Typical Reverse Recovery Charge (nC)1700
Maximum Drain Source Resistance (mOhm)25@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)180
Typical Reverse Transfer Capacitance @ Vds (pF)330@25V
Description
Trans MOSFET N-CH 100V 57A 3-Pin(3+Tab) TO-247AC Tube
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