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IRFP4468PBF
IRFP4468PBF
MOSFETs IRFP4468PBF
Infineon
IRFP4468PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRFP4468PBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5.31(Max)
Package Height20.7(Max)
Package Length15.87(Max)
Product CategoryPower MOSFET
Supplier PackageTO-247AC
Maximum IDSS (uA)20
Process TechnologyHEXFET
Standard Package NameTO-247
Typical Fall Time (ns)260
Typical Rise Time (ns)230
Number of Elements per Chip1
Maximum Power Dissipation (mW)520000
Typical Gate Charge @ 10V (nC)360
Typical Gate Charge @ Vgs (nC)360@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)1360
Typical Turn-On Delay Time (ns)52
Maximum Drain Source Voltage (V)100
Typical Gate Plateau Voltage (V)4
Typical Turn-Off Delay Time (ns)160
Maximum Diode Forward Voltage (V)1.3
Typical Gate to Drain Charge (nC)89
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)81
Typical Reverse Recovery Time (ns)100
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)290
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)19860@50V
Typical Reverse Recovery Charge (nC)370
Maximum Drain Source Resistance (MOhm)2.6@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)1120
Typical Reverse Transfer Capacitance @ Vds (pF)540@50V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)40
Description
Trans MOSFET N-CH Si 100V 290A 3-Pin(3+Tab) TO-247AC Tube
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