SVHC | Yes |
EU RoHS | Compliant with Exemption |
ECCN (US) | EAR99 |
Part Status | NRND |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Product Category | Power MOSFET |
Maximum IDSS (uA) | 25 |
SVHC Exceeds Threshold | Yes |
Typical Fall Time (ns) | 44 |
Typical Rise Time (ns) | 47 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 190000 |
Typical Gate Charge @ 10V (nC) | 150(Max) |
Typical Gate Charge @ Vgs (nC) | 150(Max)@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 720 |
Typical Turn-On Delay Time (ns) | 17 |
Maximum Drain Source Voltage (V) | 500 |
Typical Gate Plateau Voltage (V) | 5.8 |
Typical Turn-Off Delay Time (ns) | 92 |
Maximum Diode Forward Voltage (V) | 1.4 |
Typical Gate to Drain Charge (nC) | 80(Max) |
Maximum Gate Threshold Voltage (V) | 4 |
Minimum Gate Threshold Voltage (V) | 2 |
Typical Gate to Source Charge (nC) | 20(Max) |
Typical Reverse Recovery Time (ns) | 540 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 14 |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Input Capacitance @ Vds (pF) | 2600@25V |
Typical Reverse Recovery Charge (nC) | 4800 |
Maximum Drain Source Resistance (MOhm) | 400@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 56 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 340@25V |
Description | |