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IRFP4568PBF
IRFP4568PBF
MOSFETs IRFP4568PBF
Infineon
IRFP4568PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRFP4568PBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5.31(Max)
Package Height20.7(Max)
Package Length15.87(Max)
Product CategoryPower MOSFET
Supplier PackageTO-247AC
Maximum IDSS (uA)20
Process TechnologyHEXFET
Standard Package NameTO-247
Typical Fall Time (ns)84
Typical Rise Time (ns)119
Number of Elements per Chip1
Maximum Power Dissipation (mW)517000
Typical Gate Charge @ 10V (nC)151
Typical Gate Charge @ Vgs (nC)151@10V
Maximum Gate Source Voltage (V)±30
Typical Output Capacitance (pF)977
Typical Turn-On Delay Time (ns)27
Maximum Drain Source Voltage (V)150
Typical Gate Plateau Voltage (V)6.8
Typical Turn-Off Delay Time (ns)47
Maximum Diode Forward Voltage (V)1.3
Typical Gate to Drain Charge (nC)55
Maximum Gate Threshold Voltage (V)5
Minimum Gate Threshold Voltage (V)3
Typical Gate to Source Charge (nC)52
Typical Reverse Recovery Time (ns)110
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)171
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)10470@50V
Typical Reverse Recovery Charge (nC)515
Maximum Drain Source Resistance (MOhm)5.9@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)30
Maximum Pulsed Drain Current @ TC=25°C (A)684
Typical Reverse Transfer Capacitance @ Vds (pF)203@50V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)40
Description
Trans MOSFET N-CH Si 150V 171A 3-Pin(3+Tab) TO-247AC Tube
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