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MOSFETs IRFP460HPBF
Vishay
IRFP460HPBF
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Diodes, Transistors and Thyristors
MOSFETs
IRFP460HPBF.pdf
Specification
Product AttributeAttribute Value
EU RoHSCompliant
PackagingTube
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Typical Fall Time (ns)47
Typical Rise Time (ns)60
Number of Elements per Chip1
Maximum Power Dissipation (mW)329000
Typical Gate Charge @ 10V (nC)77
Typical Gate Charge @ Vgs (nC)77@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)29
Maximum Drain Source Voltage (V)500
Typical Turn-Off Delay Time (ns)67
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)20
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)3208@100V
Maximum Drain Source Resistance (mOhm)270@10V
Description
Trans MOSFET N-CH 500V 20A Tube
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