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IRFP7430PBF
IRFP7430PBF
MOSFETs IRFP7430PBF
Infineon
IRFP7430PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRFP7430PBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.98
Package Height20.21
Package Length15.58
Product CategoryPower MOSFET
Supplier PackageTO-247AC
Maximum IDSS (uA)1
Process TechnologyHEXFET
Standard Package NameTO-247
Typical Fall Time (ns)100
Typical Rise Time (ns)105
Supplier Temperature GradeIndustrial
Number of Elements per Chip1
Maximum Power Dissipation (mW)366000
Typical Gate Charge @ 10V (nC)300
Typical Gate Charge @ Vgs (nC)300@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)2130
Typical Turn-On Delay Time (ns)32
Maximum Drain Source Voltage (V)40
Typical Gate Plateau Voltage (V)4.8
Typical Turn-Off Delay Time (ns)160
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.86
Typical Gate to Drain Charge (nC)98
Maximum Gate Threshold Voltage (V)3.9
Minimum Gate Threshold Voltage (V)2.2
Typical Gate to Source Charge (nC)77
Typical Reverse Recovery Time (ns)52
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)404
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)14240@25V
Typical Reverse Recovery Charge (nC)97
Maximum Drain Source Resistance (MOhm)1.3@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)1524
Typical Reverse Transfer Capacitance @ Vds (pF)1460@25V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)40
Description
Trans MOSFET N-CH Si 40V 404A 3-Pin(3+Tab) TO-247AC Tube
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