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IRFR120NPBF
IRFR120NPBF
MOSFETs IRFR120NPBF
Infineon
IRFR120NPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRFR120NPBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)25
Process TechnologyHEXFET
Standard Package NameTO-252
Typical Fall Time (ns)23
Typical Rise Time (ns)23
Number of Elements per Chip1
Maximum Power Dissipation (mW)48000
Typical Gate Charge @ 10V (nC)25(Max)
Typical Gate Charge @ Vgs (nC)25(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)92
Typical Turn-On Delay Time (ns)4.5
Maximum Drain Source Voltage (V)100
Typical Gate Plateau Voltage (V)5.2
Typical Turn-Off Delay Time (ns)32
Maximum Diode Forward Voltage (V)1.3
Typical Gate to Drain Charge (nC)11(Max)
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)4.8(Max)
Typical Reverse Recovery Time (ns)99
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)9.4
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)330@25V
Typical Reverse Recovery Charge (nC)390
Maximum Drain Source Resistance (MOhm)210@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)38
Typical Reverse Transfer Capacitance @ Vds (pF)54@25V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)50
Description
Trans MOSFET N-CH 100V 9.4A 3-Pin(2+Tab) DPAK Tube
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