Product Attribute | Attribute Value |
PPAP | No |
Packaging | Tape and Reel |
Automotive | No |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Product Category | Power MOSFET |
Process Technology | HEXFET |
Typical Fall Time (ns) | 12 |
Typical Rise Time (ns) | 11 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 43000 |
Typical Gate Charge @ 10V (nC) | 15 |
Typical Gate Charge @ Vgs (nC) | 15@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 6.4 |
Maximum Drain Source Voltage (V) | 200 |
Typical Turn-Off Delay Time (ns) | 20 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 5 |
Typical Input Capacitance @ Vds (pF) | 300@25V |
Maximum Drain Source Resistance (MOhm) | 600@10V |
Description |