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IRFR3711PBF
IRFR3711PBF
MOSFETs IRFR3711PBF
Infineon
IRFR3711PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRFR3711PBF.pdf
Specification
Product AttributeAttribute Value
HTS8542330001
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Process TechnologyHEXFET
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)12
Typical Rise Time (ns)220
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ Vgs (nC)29@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)17
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)100
Typical Input Capacitance @ Vds (pF)2980@10V
Maximum Drain Source Resistance (MOhm)6.5@10V
Description
Trans MOSFET N-CH 20V 100A 3-Pin(2+Tab) DPAK
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