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IRFS4229PBF
IRFS4229PBF
MOSFETs IRFS4229PBF
Infineon
IRFS4229PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRFS4229PBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)20
Process TechnologyHEXFET
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)21
Typical Rise Time (ns)31
Number of Elements per Chip1
Maximum Power Dissipation (mW)330000
Typical Gate Charge @ 10V (nC)72
Typical Gate Charge @ Vgs (nC)72@10V
Maximum Gate Source Voltage (V)±30
Typical Output Capacitance (pF)390
Typical Turn-On Delay Time (ns)18
Maximum Drain Source Voltage (V)250
Typical Gate Plateau Voltage (V)6
Typical Turn-Off Delay Time (ns)30
Maximum Diode Forward Voltage (V)1.3
Typical Gate to Drain Charge (nC)26
Maximum Gate Threshold Voltage (V)5
Minimum Gate Threshold Voltage (V)3
Typical Reverse Recovery Time (ns)190
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)45
Operating Junction Temperature (°C)-40 to 175
Typical Input Capacitance @ Vds (pF)4560@25V
Typical Reverse Recovery Charge (nC)840
Maximum Drain Source Resistance (mOhm)48@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)30
Maximum Pulsed Drain Current @ TC=25°C (A)180
Typical Reverse Transfer Capacitance @ Vds (pF)100@25V
Description
Trans MOSFET N-CH 250V 45A 3-Pin(2+Tab) D2PAK Tube
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