Product Attribute | Attribute Value |
HTS | 8541.21.00.95 |
Tab | Tab |
PPAP | No |
EU RoHS | Compliant |
Material | Si |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tube |
Pin Count | 7 |
Automotive | No |
PCB changed | 6 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Quint Source |
Package Width | 9.65(Max) |
Package Height | 4.83(Max) |
Package Length | 10.67(Max) |
Product Category | Power MOSFET |
Supplier Package | D2PAK |
Maximum IDSS (uA) | 1 |
Process Technology | HEXFET |
Standard Package Name | TO-263 |
Typical Fall Time (ns) | 79 |
Typical Rise Time (ns) | 102 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 375000 |
Typical Gate Charge @ 10V (nC) | 236 |
Typical Gate Charge @ Vgs (nC) | 236@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 24 |
Maximum Drain Source Voltage (V) | 60 |
Typical Turn-Off Delay Time (ns) | 168 |
Maximum Gate Threshold Voltage (V) | 3.7 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 338 |
Typical Input Capacitance @ Vds (pF) | 12960@25V |
Maximum Drain Source Resistance (MOhm) | 1.4@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |