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IRFS7530-7PPBF
IRFS7530-7PPBF
MOSFETs IRFS7530-7PPBF
Infineon
IRFS7530-7PPBF
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
TabTab
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTube
Pin Count7
AutomotiveNo
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quint Source
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)1
Process TechnologyHEXFET
Standard Package NameTO-263
Typical Fall Time (ns)79
Typical Rise Time (ns)102
Number of Elements per Chip1
Maximum Power Dissipation (mW)375000
Typical Gate Charge @ 10V (nC)236
Typical Gate Charge @ Vgs (nC)236@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)24
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)168
Maximum Gate Threshold Voltage (V)3.7
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)338
Typical Input Capacitance @ Vds (pF)12960@25V
Maximum Drain Source Resistance (MOhm)1.4@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH Si 60V 338A 7-Pin(6+Tab) D2PAK Tube
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