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IRFSL3107PBF
IRFSL3107PBF
MOSFETs IRFSL3107PBF
Infineon
IRFSL3107PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRFSL3107PBF.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusLTB
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.83(Max)
Package Height9.65(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-262
Process TechnologyHEXFET
Standard Package NameI2PAK
Typical Fall Time (ns)100
Typical Rise Time (ns)110
Number of Elements per Chip1
Maximum Power Dissipation (mW)370000
Typical Gate Charge @ 10V (nC)160
Typical Gate Charge @ Vgs (nC)160@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)19
Maximum Drain Source Voltage (V)75
Typical Turn-Off Delay Time (ns)99
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)230
Typical Input Capacitance @ Vds (pF)9370@50V
Maximum Drain Source Resistance (mOhm)3@10V
Description
Trans MOSFET N-CH Si 75V 230A 3-Pin(3+Tab) TO-262 Tube
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