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IRFSL4615PBF
IRFSL4615PBF
MOSFETs IRFSL4615PBF
Infineon
IRFSL4615PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRFSL4615PBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.83(Max)
Package Height9.65(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-262
Maximum IDSS (uA)20
Process TechnologyHEXFET
Standard Package NameI2PAK
Typical Fall Time (ns)20
Typical Rise Time (ns)35
Number of Elements per Chip1
Maximum Power Dissipation (mW)144000
Typical Gate Charge @ 10V (nC)26
Typical Gate Charge @ Vgs (nC)26@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)155
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)150
Typical Gate Plateau Voltage (V)6.1
Typical Turn-Off Delay Time (ns)25
Maximum Diode Forward Voltage (V)1.3
Typical Gate to Drain Charge (nC)9
Maximum Gate Threshold Voltage (V)5
Minimum Gate Threshold Voltage (V)3
Typical Gate to Source Charge (nC)8.6
Typical Reverse Recovery Time (ns)70
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)33
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)1750@50V
Typical Reverse Recovery Charge (nC)177
Maximum Drain Source Resistance (mOhm)42@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)140
Typical Reverse Transfer Capacitance @ Vds (pF)40@50V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)40
Description
Trans MOSFET N-CH 150V 33A 3-Pin(3+Tab) TO-262
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