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IRFSL7530PBF
IRFSL7530PBF
MOSFETs IRFSL7530PBF
Infineon
IRFSL7530PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRFSL7530PBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.83(Max)
Package Height9.65(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-262
Maximum IDSS (uA)1
Process TechnologyHEXFET
Standard Package NameI2PAK
Typical Fall Time (ns)104
Typical Rise Time (ns)141
Number of Elements per Chip1
Maximum Power Dissipation (mW)375000
Typical Gate Charge @ 10V (nC)274
Typical Gate Charge @ Vgs (nC)274@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)52
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)172
Maximum Gate Threshold Voltage (V)3.7
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)295
Typical Input Capacitance @ Vds (pF)13703@25V
Maximum Drain Source Resistance (mOhm)2@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH Si 60V 295A 3-Pin(3+Tab) TO-262 Tube
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