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IRFU1018EPBF
IRFU1018EPBF
MOSFETs IRFU1018EPBF
Infineon
IRFU1018EPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRFU1018EPBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width2.39(Max)
Package Height6.22(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageIPAK
Process TechnologyHEXFET
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)46
Typical Rise Time (ns)35
Number of Elements per Chip1
Maximum Power Dissipation (mW)110000
Typical Gate Charge @ 10V (nC)46
Typical Gate Charge @ Vgs (nC)46@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)13
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)55
Typical Gate to Drain Charge (nC)12
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)79
Typical Input Capacitance @ Vds (pF)2290@50V
Maximum Drain Source Resistance (MOhm)8.4@10V
Description
Trans MOSFET N-CH Si 60V 79A 3-Pin(3+Tab) IPAK Tube
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