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IRFY9130
IRFY9130
MOSFETs IRFY9130
Infineon
IRFY9130
--
Diodes, Transistors and Thyristors
MOSFETs
IRFY9130.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSNot Compliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width5.08(Max)
Package Height10.92(Max)
Package Length10.66(Max)
Product CategoryPower MOSFET
Supplier PackageTO-257AA
Typical Fall Time (ns)140(Max)
Typical Rise Time (ns)140(Max)
Number of Elements per Chip1
Maximum Power Dissipation (mW)75000
Typical Gate Charge @ 10V (nC)30(Max)
Typical Gate Charge @ Vgs (nC)30(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)60(Max)
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)140(Max)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)11.2
Typical Input Capacitance @ Vds (pF)800@25V
Maximum Drain Source Resistance (MOhm)300@10V
Description
Trans MOSFET P-CH 100V 11.2A 3-Pin(3+Tab) TO-257AA
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