Product Attribute | Attribute Value |
Tab | Tab |
PPAP | No |
EU RoHS | Compliant with Exemption |
Material | Si |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Pin Count | 3 |
Automotive | No |
Lead Shape | Through Hole |
PCB changed | 3 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 4.83(Max) |
Package Height | 9.65(Max) |
Package Length | 10.67(Max) |
Product Category | Power MOSFET |
Supplier Package | TO-262 |
Process Technology | HEXFET |
Standard Package Name | I2PAK |
Typical Fall Time (ns) | 27 |
Typical Rise Time (ns) | 34 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 3800 |
Typical Gate Charge @ 10V (nC) | 20(Max) |
Typical Gate Charge @ Vgs (nC) | 20(Max)@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 140 |
Typical Turn-On Delay Time (ns) | 4.9 |
Maximum Drain Source Voltage (V) | 55 |
Typical Turn-Off Delay Time (ns) | 19 |
Typical Gate to Drain Charge (nC) | 7.6(Max) |
Maximum Gate Threshold Voltage (V) | 4 |
Typical Gate to Source Charge (nC) | 5.3(Max) |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 17 |
Typical Input Capacitance @ Vds (pF) | 370@25V |
Typical Reverse Recovery Charge (nC) | 120 |
Maximum Drain Source Resistance (mOhm) | 70@10V |
Description |