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IRFZ44VZPBF
IRFZ44VZPBF
MOSFETs IRFZ44VZPBF
Infineon
IRFZ44VZPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRFZ44VZPBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.83(Max)
Package Height9.02(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Maximum IDSS (uA)20
Process TechnologyHEXFET
Standard Package NameTO-220
Typical Fall Time (ns)38
Typical Rise Time (ns)62
Number of Elements per Chip1
Maximum Power Dissipation (mW)92000
Typical Gate Charge @ 10V (nC)43
Typical Gate Charge @ Vgs (nC)43@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)1870
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)5.9
Typical Turn-Off Delay Time (ns)35
Maximum Diode Forward Voltage (V)1.3
Typical Gate to Drain Charge (nC)18
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)11
Typical Reverse Recovery Time (ns)23
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)57
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)1690@25V
Typical Reverse Recovery Charge (nC)17
Maximum Drain Source Resistance (mOhm)12@10V
Maximum Gate Source Leakage Current (nA)200
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)230
Typical Reverse Transfer Capacitance @ Vds (pF)130@25V
Description
Trans MOSFET N-CH Si 60V 57A 3-Pin(3+Tab) TO-220AB Tube
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