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MOSFETs IRH9150
Infineon
IRH9150
--
Diodes, Transistors and Thyristors
MOSFETs
IRH9150.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSNot Compliant
MountingThrough Hole
ECCN (US)Contact Export
Pin Count3
AutomotiveNo
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width26.63(Max)
Package Height7.74(Max)
Package Length39.37(Max)
Product CategoryPower MOSFET
Supplier PackageTO-204AE
Standard Package NameTO-3
Typical Fall Time (ns)190(Max)
Typical Rise Time (ns)170(Max)
Number of Elements per Chip1
Maximum Power Dissipation (mW)150000
Typical Gate Charge @ 10V (nC)200(Max)
Typical Gate Charge @ Vgs (nC)200(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)40(Max)
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)190(Max)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)22
Typical Input Capacitance @ Vds (pF)4300@25V
Maximum Drain Source Resistance (MOhm)85@12V
Description
Trans MOSFET P-CH 100V 22A 3-Pin(2+Tab) TO-204AE
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