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MOSFETs IRHG53110
Infineon
IRHG53110
--
Diodes, Transistors and Thyristors
MOSFETs
IRHG53110.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MaterialSi
MountingThrough Hole
ECCN (US)Contact Export
Pin Count14
AutomotiveNo
PCB changed14
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationQuad
Package Width7.74(Max)
Package Height3.3(Max)
Package Length19.3(Max)
Product CategoryPower MOSFET
Supplier PackageMO-036AB
Maximum IDSS (uA)10
Process TechnologyR5
Typical Fall Time (ns)15(Max)
Typical Rise Time (ns)16(Max)
Number of Elements per Chip4
Maximum Power Dissipation (mW)1400
Typical Gate Charge @ Vgs (nC)17(Max)@12V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)21(Max)
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)30(Max)
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1.6
Typical Input Capacitance @ Vds (pF)370@25V
Maximum Drain Source Resistance (MOhm)290@12V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH Si 100V 1.6A 14-Pin MO-036AB
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