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IRHG6110
IRHG6110
MOSFETs IRHG6110
Infineon
IRHG6110
--
Diodes, Transistors and Thyristors
MOSFETs
IRHG6110.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingThrough Hole
ECCN (US)Contact Export
Pin Count14
AutomotiveNo
PCB changed14
Part StatusActive
Channel ModeEnhancement
Channel TypeN|P
ConfigurationQuad
Package Width7.74(Max)
Package Height3.3(Max)
Package Length19.3(Max)
Product CategoryPower MOSFET
Supplier PackageMO-036AB
Standard Package NameMO-036AB
Typical Fall Time (ns)45(Max)@N Channel|51(Max)@P Channel
Typical Rise Time (ns)16(Max)@N Channel|19(Max)@P Channel
Number of Elements per Chip4
Maximum Power Dissipation (mW)1400
Typical Gate Charge @ Vgs (nC)11(Max)@12V@N Channel|15(Max)@12V@P Channel
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)20(Max)@N Channel|22(Max)@P Channel
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)65(Max)@N Channel|66(Max)@P Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1@N Channel|0.75@P Channel
Typical Input Capacitance @ Vds (pF)300@25V@N Channel|335@25V@P Channel
Maximum Drain Source Resistance (MOhm)700@12V@N Channel|1200@12V@P Channel
Description
Trans MOSFET N/P-CH 100V 1A/0.75A 14-Pin MO-036AB
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