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MOSFETs IRHLNMC73110
Infineon
IRHLNMC73110
--
Diodes, Transistors and Thyristors
MOSFETs
IRHLNMC73110.pdf
Specification
Product AttributeAttribute Value
MaterialSi
ECCN (US)EAR99
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Typical Fall Time (ns)12(Max)
Typical Rise Time (ns)75(Max)
Number of Elements per Chip1
Maximum Power Dissipation (mW)23200
Typical Gate Charge @ Vgs (nC)11(Max)@4.5V
Maximum Gate Source Voltage (V)±10
Typical Turn-On Delay Time (ns)18(Max)
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)50(Max)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6.5
Typical Input Capacitance @ Vds (pF)572@25V
Maximum Drain Source Resistance (MOhm)290@4.5V
Description
Trans MOSFET N-CH Si 100V 6.5A
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