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IRHM9160
IRHM9160
MOSFETs IRHM9160
Infineon
IRHM9160
--
Diodes, Transistors and Thyristors
MOSFETs
IRHM9160.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSNot Compliant
MountingThrough Hole
ECCN (US)Contact Export
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width6.6(Max)
Package Height13.84(Max)
Package Length13.84(Max)
Product CategoryPower MOSFET
Supplier PackageTO-254AA
Maximum IDSS (uA)25
Process TechnologyHEXFET
Standard Package NameTO-254-AA
Typical Fall Time (ns)190(Max)
Typical Rise Time (ns)170(Max)
Number of Elements per Chip1
Maximum Power Dissipation (mW)250000
Typical Gate Charge @ Vgs (nC)290(Max)@12V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)35(Max)
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)190(Max)
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)35
Typical Input Capacitance @ Vds (pF)6000@25V
Maximum Drain Source Resistance (MOhm)75@12V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH 100V 35A 3-Pin(3+Tab) TO-254AA
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