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MOSFETs IRHN7450SESCS
Infineon
IRHN7450SESCS
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Not Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 11.55(Max) |
| Package Height | 3.07(Max) |
| Package Length | 16(Max) |
| Product Category | Power MOSFET |
| Supplier Package | SMD-1 |
| Maximum IDSS (uA) | 50 |
| Process Technology | HEXFET |
| Typical Fall Time (ns) | 60(Max) |
| Typical Rise Time (ns) | 60(Max) |
| Supplier Temperature Grade | Military |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 151000 |
| Typical Gate Charge @ Vgs (nC) | 140(Max)@12V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 35(Max) |
| Maximum Drain Source Voltage (V) | 500 |
| Typical Turn-Off Delay Time (ns) | 75(Max) |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 12 |
| Typical Input Capacitance @ Vds (pF) | 2800@25V |
| Maximum Drain Source Resistance (MOhm) | 570@12V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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