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MOSFETs IRHN9130
Infineon
IRHN9130
--
Diodes, Transistors and Thyristors
MOSFETs
IRHN9130.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveUnknown
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width16(Max)
Package Height3.07(Max)
Package Length11.55(Max)
Product CategoryPower MOSFET
Supplier PackageSMD-1
Maximum IDSS (uA)25
Process TechnologyHEXFET
Typical Fall Time (ns)70(Max)
Typical Rise Time (ns)50(Max)
Number of Elements per Chip1
Maximum Power Dissipation (mW)75000
Typical Gate Charge @ Vgs (nC)45(Max)@12V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)30(Max)
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)70(Max)
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)11
Typical Input Capacitance @ Vds (pF)1200@25V
Maximum Drain Source Resistance (MOhm)325@12V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH Si 100V 11A Automotive 3-Pin SMD-1
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