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MOSFETs IRHN9230
Infineon
IRHN9230
--
Diodes, Transistors and Thyristors
MOSFETs
IRHN9230.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)Contact Export
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width16(Max)
Package Height3.07(Max)
Package Length11.55(Max)
Product CategoryPower MOSFET
Supplier PackageSMD-1
Maximum IDSS (uA)25
Process TechnologyHEXFET
Typical Fall Time (ns)90(Max)
Typical Rise Time (ns)90(Max)
Number of Elements per Chip1
Maximum Power Dissipation (mW)75000
Typical Gate Charge @ Vgs (nC)45(Max)@12V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)50(Max)
Maximum Drain Source Voltage (V)200
Typical Turn-Off Delay Time (ns)90(Max)
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6.5
Typical Input Capacitance @ Vds (pF)1100@25V
Maximum Drain Source Resistance (MOhm)920@12V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH Si 200V 6.5A 3-Pin SMD-1
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