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MOSFETs IRHN93250
Infineon
IRHN93250
--
Diodes, Transistors and Thyristors
MOSFETs
IRHN93250.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width11.55(Max)
Package Height3.07(Max)
Package Length16(Max)
Product CategoryPower MOSFET
Supplier PackageSMD-1
Standard Package NameSMD
Typical Fall Time (ns)220(Max)
Typical Rise Time (ns)240(Max)
Number of Elements per Chip1
Maximum Power Dissipation (mW)150000
Typical Gate Charge @ Vgs (nC)200(Max)@12V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)60(Max)
Maximum Drain Source Voltage (V)200
Typical Turn-Off Delay Time (ns)225(Max)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)14
Typical Input Capacitance @ Vds (pF)4200@25V
Maximum Drain Source Resistance (MOhm)330@12V
Description
Trans MOSFET P-CH 200V 14A 3-Pin SMD-1
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