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MOSFETs IRHNJ9230
Infineon
IRHNJ9230
--
Diodes, Transistors and Thyristors
MOSFETs
IRHNJ9230.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSSupplier Unconfirmed
MountingSurface Mount
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width10.28(Max)
Package Height2.61(Max)
Package Length7.64(Max)
Supplier PackageSMD-0.5
Number of Elements per Chip1
Maximum Power Dissipation (mW)750000
Maximum Drain Source Voltage (V)200
Maximum Continuous Drain Current (A)6.5
Maximum Drain Source Resistance (MOhm)800@12V
Description
Power MOSFET
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